Q. Gao, Semiconductor Manufacturing International Corporation, Shanghai, China; M. Zhang, Semiconductor Manufacturing International Corperation, Shanghai, China; C. Niou, Semiconductor Manufacturing International (Beijing) Corp, Beijing, China; M. Li, Semicoductor Manufacturing International Co., Shanghai, China; W. T. K. Chien, Semiconductor Manufacturing International Company, Shanghai, China; X. Chen, Semiconductor Manufacturing International (Shanghai) Corp, Shanghai, China

Summary: Single crystal silicon TEM sample structure was studied experimentally. A novel sample and its fabrication process were reported in this paper. The sandwich structure can be observed directly in TEM with this sample, which was never reported before. When the crystal layer in monocrystal silicon is less than 18 nanometers, the sample will be observed as full amorphous.