J. Hu, Semiconductor Manufacturing International Company, Shanghai, China; J. Zhou, Semiconductor manufacturing international Company, Shanghai, China; M. Li, K. Chien, Semicoductor Manufacturing International Co., Shanghai, China; Q. Gao, Semiconductor Manufacturing International Corporation, Shanghai, China; C. Niou, Semiconductor Manufacturing International (Beijing) Corp, Beijing, China

Summary: As the electron beam assisted Pt deposition brings almost no damage to the sample surface during FIB (focused ion beam) sample treatment, it became a very effective way to protect the sample surface from being damaged. In this paper phenomenon related to electron beam assisted deposition of platinum were studied. It showed that a 45 nm thick remain E beam Pt could effectively protect (100) silicon from damage induced by ion beam assisted Pt deposition (with extract voltage of 30 KV, current of 30 pA, etc). Also carbon based organic layer under electron beam assisted Pt was observed. Its mechanism and influence on exposed oxide thickness measurement was discussed. It is suggested carbon glue cap as the protective layer or poly silicon deposit in line before the wafer submitting for TEM observation.