J. Hu, Q. Qao, Semiconductor Manufacturing International Company, Shanghai, China; M. Li, K. Chien, Semicoductor Manufacturing International Co., Shanghai, China; C. Niou, Semiconductor Manufacturing International (Beijing) Corp, Beijing, China

Summary: In this paper the artifacts of additional copper signal induced by copper grid, one of the most widely used supporting grid for FIB (focus ion beam) prepared TEM sample, was studied. Its influence on both spot and line scan EDS analysis was described. It was found that in line scan analysis the copper signals changed between heavy and light elements, which could bring confusions to the EDS analysis on Cu interconnect structure. Based on the study on nickel-supported film, we concluded that the additional copper signals mainly result from electrons scattered by the sample striking the Cu grid.