|
||||
| Back to "Symposium" Search | Back to Main Search | |||
| Session 10: Metrology and Materials Analysis 1 | ||||
| Location: Trinity Room (Renaissance Austin Hotel) | ||||
| (Please check final room assignments on-site). | ||||
| Session Description: Various ideas and techniques to address the challenges in physical identification and materials characterization of defects are presented in this session. The first two papers utilize e-beam contrast in a SEM for dopant profiling and defect localization. A novel FIB grounding method to eliminate sample charging during Auger analysis is addressed in the third paper. A technique to identify undoped defective poly by chemical staining of a TEM sample is presented in the fourth paper. The effect of TEM sample support grid on EDS analysis is discussed in the final paper. | ||||
| Editor: | Dr. Sam Subramanian Freescale Semiconductor, Inc., Austin, TX | |||
| Session Chair: | Dr. Sam Subramanian Freescale Semiconductor, Inc., Austin, TX | |||
| 3:55 PM | Secondary Electron Potential Contrast for Dopant Profiling of Silicon Carbide Devices | |||
| 4:20 PM | Image Intensity Analysis for Defect Localization Utilizing SEM BSE Imaging | |||
| 4:45 PM | Focused Ion Beam Grounding to Alleviate Sample Charging for Scanning Auger Electron Spectroscopy | |||
| 5:10 PM | Energy Dispersive Spectrum (EDS) Study of Copper Grid Effect on Semiconductor Failure Analysis | |||
| 5:35 PM | Studies of Silicon Dust Corrosion on Microchip Al Bondpads and Elimination of Silicon Dust During Wafer Sawing Process | |||