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Wednesday, November 15, 2006 - 10:45 AM

Root Cause Finding of a Diode Leakage Failure using Scanning Magnetic Microscopy and ToF-SIMS as Key Methods

H. Preu, W. Mack, T. Kilger, B. Seidl, M. Kirchberger, Infineon Technologies AG, Regensburg, Germany; P. Alpern, Infineon Technologies AG, Neubiberg, Germany

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Summary: In this case study we present a successful approach for failure analysis of a diode leakage. An analytical flow will be introduced, which contains standard techniques as well as SQUID (superconducting quantum interference device) scanning magnetic microscopy and ToF-SIMS as key methods for localization and root cause identification.