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Thursday, November 16, 2006 - 3:15 PM

Atomic Force Probe Kelvin Measurements of Large MOSFET Devices at Contact Level for Accurate Device Threshold Characteristics

T. Kane, M. P. Tenney, IBM, Hopewell Junction, NY; A. N. Erickson, S. Phan, Multiprobe, Inc, Santa Barbara, CA

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Summary: Large Gate width devices associated with peripheral SRAM logic circuits, PLL analog circuits, and Analog current mirrors places challenges reconstruction of threshold measurements at contact level.Kelvin measurments by Atomic Force Probing with a novel probe placement is essential for valid device threshold measurements such as Vtsat, Vtlin.