Y. L. Kuo, Taiwan Semiconductor Manufacturing Company, Ltd., Taiwain, China; C. H. Wu, C. P. Lin, C. H. Tang, C. C. Ting, Taiwan Semiconductor Manufacturing Co., Hsin-Chu, Taiwan

Summary: In this paper, real SRAM failures were analyzed by using nano-probing system. The correlation between electrical symptoms of discrete 6T-SRAM cells with SBD and failure mode is clearly revealed