Material and Doping contrast in Semiconductor Devices at Nanoscale Resolution Using Scattering-Type Scanning Near-Field Optical Microscopy

Tuesday, November 14, 2006 - 3:55 PM

Material and Doping contrast in Semiconductor Devices at Nanoscale Resolution Using Scattering-Type Scanning Near-Field Optical Microscopy

J. Wittborn, R. Weiland, Infineon Technologies AG, Munich, Germany; D. V. Kazantsev, A. Huber, F. Keilmann, R. Hillenbrand, Max-Planck-Institut für Biochemie, Martinsried, Germany

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Summary: We demonstrate that scattering-type near-field optical microscopy (s-SNOM) operating at mid infrared wavelengths, λ = 10 μm, can be applied for nanoscale resolved mapping of material and doping in cross-sectional samples of microelectronic circuits.