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| Session 5: Scanning Probe Microscopy | ||||
| Location: Ballroom B (Renaissance Austin Hotel) | ||||
| (Please check final room assignments on-site). | ||||
| Session Description: This session focuses on the application of scanning capcitance microscopy (SCM), scanning spreading resistance microscopy (SSRM), and near-field scanning optical microscopy (NSOM) for failure analysis. The first paper reports the application of SCM to directly probe the carrier density in floating memory devices. Sample preparation is key to successful application of SCM on flip-chip packaged devices as described in the following paper. In a subsequent paper, a very intriguing application of NSOM for material and doping contrast with sub-diffraction limited spatial resolution is presented. The last paper caps off the session with the use of SCM and SSRM in tandem to identify the root cause failure in an IC. | ||||
| Editor: | Dr. Rama Goruganthu AMD, Austin, TX | |||
| Session Chair: | Dr. Rama Goruganthu AMD, Austin, TX | |||
| 3:05 PM | Direct Measurements of Charge in Floating Gate Transistor Channels of Flash Memories Using Scanning Capacitance Microscopy | |||
| 3:30 PM | Development of Backside Scanning Capacitance Microscopy Technique for Advanced SOI Microprocessors | |||
| 3:55 PM | Material and Doping contrast in Semiconductor Devices at Nanoscale Resolution Using Scattering-Type Scanning Near-Field Optical Microscopy | |||
| 4:20 PM | Identification of Root Cause Failure in Silicon on Insulator Body Contacted nFETs Using Scanning Capacitance Microscopy and Scanning Spreading Resistance Microscopy | |||