ISTFA Home      Exposition      To Register      ASM Homepage
Back to "Session 14: Advanced Techniques 2" Search
  Back to "Symposium" Search  Back to Main Search

Thursday, November 16, 2006 - 10:45 AM

Indirect Electrostatic Discharge Stressing Mechanism in VLSI Chips with Multiple Power Supply Domains

S. Sofer, Y. Fefer, Freescale Semiconductor Israel Ltd., Herzelia, Israel; Y. Shapira, Tel Aviv University, Tel Aviv, Israel

View in PDF format

Summary: Indirect electrostatic discharge stressing of a chip with multiple isolated power domains was analyzed. The stress penetrates to the victim domain via common nets having non-negligible complex impedance and via coupling of the inter-domain parasitic capacitors and in some cases may cause chip damage.