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| Session 14: Advanced Techniques 2 | ||||
| Location: Ballroom A (Renaissance Austin Hotel) | ||||
| (Please check final room assignments on-site). | ||||
| Session Description: The second session features e-beam probing in backside FIB trenches, adaptation of a solid immersion lens for thermal imaging, indirect ESD stressing, a new planar deprocessing method, and an advanced reverse engineering process. | ||||
| Editor: | Rajen Dias Intel Corporation, Chandler, AZ | |||
| Session Chairs: | Dr. Rajen Dias Intel Corporation, Chandler, AZ Dr. Benaiah D. Schrag Micro Magnetics, Inc., Fall River, MA | |||
| 9:55 AM | Functional IC Analysis through Chip Backside with Nano Scale Resolution - E-Beam Probing in FIB Trenches to STI Level | |||
| 10:20 AM | Use of a Solid Immersion Lens for Thermal IR Imaging | |||
| 10:45 AM | Indirect Electrostatic Discharge Stressing Mechanism in VLSI Chips with Multiple Power Supply Domains | |||
| 11:10 AM | Planar Deprocessing of Advanced VLSI Devices | |||
| 11:35 AM | An Advanced Integrated Circuit Analysis System | |||