M. Suzuki, SaHitachi High Technology Corporationnta Clara University, Santa Clara, CA; Y. Ominami, Q. Ngo, C. Y. Yang, Santa Clara University, Santa Clara, CA; K. J. McIlwrath, K. Jarausch, Hitachi High Technologies America, Pleasanton, CA; A. M. Cassell, NASA Ames Research Center, Moffett Field, CA; J. Li, Semprus BioSciences, Cambridge, MA

Summary: Carbon nanotubes (CNTs) and carbon nanofibers (CNFs) are possible candidates for the next-generation interconnect materials for VLSI circuits. We performed an in situ electron microscopy study of CNF failure due to high-current stress. The breakdown along the side of the cup-shaped graphitic layer was observed. The results suggest that optimization of the layer structure of CNF is the key to higher current capability.