C. F. H. Gondran, B. Foran, M. H. Clark, ATDF at International SEMATECH, Austin, TX; D. F. Paul, Physical Electronics, Chanhassen, MN; S. K. Das, IBM Assignee to SEMATECH, Austin, TX

Summary: This work presents a quick check for considering the geometry of a specific defect when selecting AES or STEM-EELS as an analytical technique. The approach is derived from basic geometric considerations and illustrated with a case study: a comparison of STEM-EELS and AES analysis of ~ 10-20 nm particle defects found on a dense line structure.