Identification of Root Cause Failure in Silicon on Insulator Body Contacted nFETs Using Scanning Capacitance Microscopy and Scanning Spreading Resistance Microscopy
J. McMurray, C. M. Molella, IBM Microelectronics, Hopewell Junction, NY
Summary: A new sample preparation was created to allow plan view samples to be created for the acitve silicon - buried oxide interface. This new preparation technique allowed a low carrier region in failing body contacted nFETs to be identified.
