B. Domenges, CNRT-CNRS, caen, France; P. Poirier, Philips Semiconductors, CAEN, France
Summary: In this study, the resistance of FIB prepared vias was characterized by Kelvin probe technique and its evolution studied versus the section of the vias. Two domains of resistivity were isolated in relation to the ion beam current used for the deposition of the Pt. Also sub-micrometer vias were investigated on 4.2µm deep metal lines of BiCMOS aluminum based design and CMOS 090 copper based one. It is shown that the main parameter is the true section of the contact, the latter being favored by an adequate drill of the via inside the metal line