V. V. Talanov, A. R. Schwartz, Neocera, Inc., Beltsville, MD

Summary: We demonstrate the use of a near-field scanned microwave probe (NSMP) for FA of parametric defects in Cu/low-k interconnect that leave no physical remnant (sometimes referred to as “non-visual defects”). This technique is rapid, quantitative, non-contact, and provides direct electrical measurements. The area required for the measurement is as small as 30x30 micron, easily fitting into the scribe line on production wafers.