R. Reiche, R. Bartkowiak, M. Heller, R. Rosenkranz, Qimonda Dresden GmbH & Co. OHG, Dresden, Germany

Summary: The reliability of SEM measurement data like CD, film thickness and profile shape is very questionable due to the shrinkage of 193 nm photoresist material during electron beam exposure. Especially the analysis of resist profiles after cross section is seen to be critical. The purpose of this study is to investigate and quantify the effect of AuPd sputter preparation and SEM imaging conditions on film thickness, CD and profile shape in order to obtain high reliability and reproducibility of sample preparation and SEM measurement post resist cross section. The original thickness of the patterned 193 nm resist structures is determined from AFM measurements without destructive modification of the resist surface.