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Session 12: Metrology and Materials Analysis 2
Location: Ballroom A (Renaissance Austin Hotel)
(Please check final room assignments on-site).
Session Description: Papers in this session will focus on metrology and materials issues in microelectronics manufacturing and failure analysis. Effect of exposing photo-resist to e-beam on resist spacing is investigated using SEM and AFM in the first paper. In the second paper, a planar polishing technique, with pre-tilt to create a wedge, is used to accurately measure trench profile. Problems with high resolution TEM measurement of critical dimensions, strain, and phase of advanced semiconductor materials are addressed in the third paper. Various materials analysis techniques for analyzing solder joint properties are presented in the fourth paper.

Editor:Dr. Sam Subramanian Freescale Semiconductor, Inc., Austin, TX
Session Chair:Dr. Sam Subramanian Freescale Semiconductor, Inc., Austin, TX
8:00 AMSEM and AFM Investigation for Accurate Measurements of 193 nm Resist Profiles
8:25 AMA Novel Method for Deep Trench Profile Characterization and Process Monitoring in 90nm DRAM Technology
8:50 AMChallenges in Evaluating Thickness, Phase, and Strain in Semiconductor Devices Using High-Resolution Transmission Electron Microscopy
9:15 AMTechniques for Analyzing Solder Joint Properties and Damages in FBGA Packages