C. H. Wang, S. P. Chang, C. F. Chang, J. Y. Chiou, Taiwan Semiconductor Manufacture Company, Ltd., Taiwan, Tainan, Taiwan

Summary: On advanced technology, we often need to use focused ion beam to modify the circuit for new layout verification or electrical measurement. We prepare the sample till inter-metal dielectric (IMD), then dig the hole or deposit the metal, oxide by ion beam. We all know we can’t see the metal under oxide by ion beam but we must get the metal ion imaging we want, and then do the further action. By the advantage of dual beams, we find the phenomenon when switching ion and electron beam. The phenomenon can make the invisible metal show up. The detail will be demonstrated below.