H. S. Lin, UMC, Hsin-Chu City, Taiwan

Summary: The difficulties in identifying the precise defect location and real leakage path is increasing as the integrated circuit design and process have been becoming more and more complicated in nano scale technology node. Most of the defects causing chip leakage are detectable with only one of the FA tools such as LCD (Liquid Crystal Detection) or PEM (Photon Emission). However, some defects due to marginality of process-design interaction are often not detectable with only single FA tool. We show an example of process-design related defect which only could be detected with more advanced FA tools.