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Wednesday, November 7, 2007 - 11:10 AM

Nondestructive Defect Imaging through Image Intensity Analysis

J. J. Demarest, IBM, Albany, NY; A. Dalton, IBM Systems & Technology, Hopewell Junction, NY; L. Hahn, B. Redder, F. Wallingford, IBM, Hopewell Junction, NY; D. Bearup, Clarkson University, Potsdam, NY

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Summary: Due to shrinking dimensions in semiconductor technology (65 nm and smaller) it is now possible to use an electron beam as a materials sensor making it possible to image subsurface voids due to less electron signal when compared to a reference site. As a consequence a 3D representation of a subsurface void can be obtained prior to cross sectioning.