T. C. Chuang, Taiwan Semiconductor Manufacture Company, Ltd., Tainan, Taiwan; C. M. Shen, Taiwan Semiconductor Manufacture Company, Ltd., Taiwan, Hsin-Chu, Taiwan

Summary: This paper illustrates that correct selection from either plane-view or cross-sectional SCM analysis according to the surrounding of defect could help to exactly and rapidly diagnosis the failure mechanism. X-SCM could make vertical profile analysis but it need precise defect position just like clockwork. PV-SCM could navigate at suspected roomy space and efficiently reveal defect to reduce FA cycle time. But it could not provide deeper implant information due to the “plane” by birth. Altering and optimizing PV-SCM and X-SCM techniques to navigate various implant issue could provide correctly actions that suit local circumstance of defects and ratiocinate failure mechanism to a nicety.