L. F. Wen, TSMC, Hsin Chu, Taiwan; D. J. Wang, TSMC, Hsin-Chu, Taiwan; C. H. Chen, National Taiwan University, Taipei, Taiwan

Summary: The purpose of this paper is to present a systematic analysis methodology on new taped out High voltage (HV) product, which is encountered ~0% yield issue. In order to find out the root cause and improve the yield, a series of electrical analysis experiment to reveal the failure phenomenon of charge pumping circuit was applied. Combining the spice simulation data, I-V curve measurement, C-AFM measurement and nano probing, the resistance difference on multi finger symmetric device was revealed. And then deductive method on layout analysis and in-line split experiment were developed to explain the failure phenomenon that multi finger HV symmetric device for charge pumping circuit.