R. Rosenkranz, W. Werner, Qimonda Dresden GmbH & Co. OHG, Dresden, Germany

Summary: The Voltage Contrast localization methods became widely accepted in the semiconductor failure analysis community during the last decade and nearly all labs make use of it. Because of the fact, that Passive Voltage Contrast localization has its limits, this method is compared with the Active Voltage Contrast localization method. Advantages and disadvantages of both methods are shown and are illustrated with case studies.