ISTFA Home   •   Exposition   •   To Register   •   ASM Homepage
Back to "Session 11: Package and Assembly Level FA 3" Search
  Back to "Symposium" Search  Back to Main Search

Thursday, November 8, 2007 - 9:50 AM

Localized Die Metallization Damage Induced during Laser-marking of a Semiconductor Package

P. E. B. Paranal, Intel Technology Philippines, Inc., Gen. Trias, Cavite, Philippines

View in PDF format

Summary: This paper presents a new fail mechanism for laser-marking induced die damage. Discovered during package qualification, silica spheres – commonly used as fillers in the molding material, was shown to act as a propagation medium that promote the direct interaction of the scribing laser beam and the die surface.