A. Reverdy, NXP Semiconductors, Caen, France; M. De La Bardonnie, NXP Semiconductors, Crolles, France; M. Lamy, STMicroelectronics, Crolles, France; L. F. T. Kwakman, FEI Company, Eindhoven, Netherlands; C. Wyon, CEA-LETI, Grenoble, France; H. Murray, LaMIP, Caen, France; P. Perdu, CNES - French Space Agency, Toulouse, France

Summary: In our aim to improve the TLS based fault isolation method, we have studied thermal time-constant signatures using Dynamic Optical Beam Induced Resistance Change (D-OBIRCH), that may provide z-information of defects in the metallization part of devices (BEOL).