O. D. Patterson, J. Strane, C. Lavoie, K. Barth, X. Ouyang, IBM Corporation, Hopewell Junction, NY; K. Wu, KLA-Tencor, Hopewell Junction, NY; H. Kang, IBM Systems & Technology, Hopewell Junction, NY

Summary: This paper discusses the detection of silicide defects on SOI technology using voltage contrast inspection. The technique offers faster feedback, isolation of the exact defect location, and is useful for partition analysis to track the evolution of these defects. These defects are not visible to other tools and so the technique to accurately FIB mark these defects for planview analysis is highlighted.