T. Nokuo, Y. Eto, JEOL Ltd., Akishima Tokyo, Japan; Z. Marek, JEOL USA, Inc., Peabody, MA

Summary: In semiconductor failure analysis, a detection of abnormal resistive site is required for localization of failure site in interconnects. Authors have developed an instrument, which is able to detect abnormal resistive site using absorbed electron image (AEI) and voltage distribution contrast (VDIC) by combining a SEM and nano-probing technique [1]. In this paper, the abilities for abnormal resistive site detection of AEI and VDIC are evaluated and reported.