J. L. Lue, H. Liu, B. Pai, S. Fan, T. Wang, ProMOS Technologies Inc., Hsinchu, Taiwan; C. S. Lin, ProMOS Technologies Inc., Tajchung County, Taiwan; A. Chiou, ProMOS Technologies Inc., Taichung County, Taiwan

Summary: Discuss the failure analysis process of a DC failure using an in-FIB (Focused Ion Beam) nanoprobing technique with four probes and a scanning capacitance microscope (SCM) in advanced DRAM devices. The I-V curve shows a high leakage current at a lower threshold voltage in the failed P-MOSFET device. The cross-sectional 2-D doping profile of SCM indicates the region of P-Well bridges the drain region of the failed device that might cause the DC failure in the electrical test.