K. Skinner, M. DiBattista, R. Kneedler, L. Vasilvey, L. Drybak, J. Zbranek, FEI Company, Hillsboro, OR; G. Hartigan, M. Oosting, FEI Company, Eindhoven, Netherlands

Summary: As FIB based circuit edit technology matures, the demands for faster processing steps increase to meet the high throughput expectations from customers, yet the scaling of semiconductor process technologies require more controlled processes and improved materials property control in order to maintain lab success rate. This paper will demonstrate the process enhancements of ion beam defocusing on the traditional circuit activities of metal and dielectric deposition and Si and SiO2 etching. The gas precursors for this study include tungsten hexacarbonyl [W(CO)6] for metal deposition, tetramethylcyclotetrasiloxane [TMCTS] and oxygen [O2 ] for dielectric deposition, and xenon difluoride [XeF2] for etching. To quantify the analysis, we have employed a statistical based design of experiments (DOE) incorporating a select range of beam parameters including the beam dwell time, pitch, and precursor pressure in combination with the lens two defocus.