C. L. (. Young, Intel Corporation, Santa Clara, CA

Summary: Ultra low voltage probing by TRE technology below 1.0V is very challenging for Micro-processor debug in practical operation condition. This is because the photo-emission rate reduces exponentially as the power supply voltage (Vcc) decreases. In this paper, a new technology with improved detector in Solid Immersion Lens (SIL) TRE system was demonstrated for low voltage and small node probing. This technology improves the photon collection efficiency and lowers the dark noise to 8 KHz with advance InP/InGaAs Avalanche Photo Diode (APD). The performance gain of acquisition time reduction was shown on 45nm CMOS processor with the capability of 0.75V probing.