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Sunday, November 4, 2007 - 1:45 PM

Failure Localization with Active and Passive Voltage Contrast in FIB and SEM

R. Rosenkranz, W. Werner, Qimonda Dresden GmbH & Co. OHG, Dresden, Germany; J. Tejero, Qimonda Dresden GmbH & Co. OHG, Dresden, CO, Germany

The Voltage Contrast localization methods became widely accepted in the semiconductor failure analysis community during the last decade and nearly all labs make use of it. Nevertheless, there is a lack of a comprehensive overview over all phenomena related to this subject. The multiple advantages, possibilities and limits of VC failure localization are systemized and discussed.