L. L. Lai, Semiconductor Manufacturing International Corporation, WuHan, HuBei, China; H. Gao, WuHan XinXin Semiconductor Manufacturing Corp., WuHan, HuBei, China; H. Xiao, Hermes Microvision, Inc., San Jose, CA

Summary: We had a series of experiment and observation to investigate the application for the surface effect on the voltage contrast and dopant contrast. The in-line process gave an example of detection for the flatness in post-WCMP by way of e-Beam VC inspection. Regarding of the dopant contrast with surface effect, we are able to see doping distribution directly by SEM.