X. Deng, W. K. Loh, B. Pious, J. Raval, B. Khan, L. Liu, T. Lowry, D. Yoon, T. W. Houston, R. McKee, A. S. Kasper, D. Corum, Texas Instruments Inc, Dallas, TX

Summary: A direct bit leakage measurement (DBLM) scheme is proposed and implemented in 8Mb and 32Mb SRAM’s in 45nm and 32nm technologies. It allows, for the first time, direct and nondestructive measurement of various defect induced leakages in each bit in a functional SRAM. It thus enables collection of various defect induced bit leakage data for low-cost and fast failure analysis. It also enables collection of massive bit leakage data for statistical evaluation and location sensitivity assessment.