S. T. Liu, T. C. Liu, M. L. Chang, K. T. Chiang, S. P. Chiu, J. Lin, Integrated Service Technology Inc., Hsin-chu, Taiwan; P. Y. Lo, P. W. Li, Department of Electrical Engineering, National Central University, Taoyuan, Taiwan

Summary: New approaches of failure analysis on OTFTs are reported in this study. Successful detection and localization of defects in OTFTs inspected as voids are carried out by using SAM. The physical verification has been done by cross-section TEM with wonderful preparing the OTFT sample by DB-FIB. Moreover, we found that the device leakage in OTFTs arrays is caused by gate metal elongation. The leakage sites can be observed and located precisely by OBIRCH . Those failure modes inside of OTFTs have observed and discussed is particular.