P. F. Chou, UMC, Hsinchu, Taiwan
Summary: The techniques of doping profile inspection, such as SEM dopant contrast, SEM wet stain and SCM techniques have been widely used in failure analysis for implant root causes identification. The applications of real FA cases and advantages/disadvantages will be discussed and demonstrated in this paper. To sum up, SEM dopant contrast is the most convenient method for doping profile inspection, and SCM is the best method for low doping profile observation.