W. F. Hsieh, S. H. Tseng, B. M. She, UMC, Tainan County, Taiwan

Summary: In this study, a FIB-based cross section TEM sample preparation procedure for targeted via with barrier/Cu seed layer was introduced. The dual beam FIB with electron beam for target location and Ga ion beam for sample milling was the main tool for the targeted via with barrier/Cu seed layer inspection. With the help of delicate operation of FIB and epoxy layer protection, the cross section TEM results of targeted via with barrier/ Cu seed layer could be checked. This approach was used into the Cu process integration performance monitor. All these TEM results will be very helpful in process development and yield improvement.