C. C. Chang, C. L. Chang, UMC, Tainan, Taiwan; J. C. Lin, United Microelectronics Corporation, Hsin-Chu, Taiwan; W. S. Wu, United Microelectronics Corporation, Ltd., Tainan County, Taiwan; C. Y. Tsai, UMC, Tainan County, Taiwan

Summary: (1) a novel technique of device measurement by using C-AFM or Nano-Probing system after X-S FIB inspection has been developed. (2) This new technology provides a good chance for FA analysts to have a device characteristic study before TEM sample preparation. (3)High evidence electrical measurement result can be provided to diagnose if the suspected failure site is the real failure site or not. (4)Furthermore, the sample can continuously be analyzed by following TEM without any impact.