A. Munukutla, R. Rahn, J. Lewis, Intel Corporation, Hillsboro, OR

Summary: This paper discusses the failure mechanism and root cause for memory failures on one of the products. Also discussed in detail is the approach of fault isolation followed by hypothesis development & physical analysis to arrive at root cause of failure. Physical analysis included optical microscope, cross section followed by SEM analysis coupled with EDX, 2D X-ray. The failure mechanism was due to nickel oxide formation at the area of contact leading to intermittent failures