The 35th International Symposium for Testing and Failure Analysis (November 15-19, 2009) of ASM
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Wednesday, November 18, 2009 - 8:50 AM

Novel Dielectric Etch Chemistry for the Next Generation of Circuit Edit: Delicate to Low-k Dielectrics and Silicon

V. V. Makarov, L. Krasnobayev, Tiza Lab, LLC, Milpitas, CA

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Summary: Novel efficient Dielectric Etch solution for Circuit Edit is presented allowing, in contrast to XeF2, to avoid spontaneous (unintentional) etching/corrosion of silicon and sensitive low-k dielectrics. The chemistry can also be used to trim diffusion structures vertically or laterally for CE or device analysis. Unlike XeF2 the new etchant has higher etch control to endpoint on silicide that can be beneficial for newer CE methodologies.