The 35th International Symposium for Testing and Failure Analysis (November 15-19, 2009) of ASM

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Session 4: Circuit-Edit
Location: Meeting Room J1-J2 (San Jose McEnery Convention Center)
(Please check final room assignments on-site).
Session Description: The editing of a circuit in silicon is a widely adopted practice and advances in IC processing require continued research and development in circuit edit. This session will focus on the materials developments in circuit edit, reliability effects of back-side editing, development of advanced techniques, applications on rewiring of IC's for the purposes of debug, analysis and prototyping, typically using FIB technology.

Session Chairs:Ted Lundquist DCG Systems, Fremont, CA
Ryan Ross Freescale Semiconductor, Crolles, France
8:00 AMGlobal Die Ultra-Thin Silicon for Backside Diagnostics and Circuit Edit
8:25 AMMethods for Quantifying FIB Milling Acuity
8:50 AMNovel Dielectric Etch Chemistry for the Next Generation of Circuit Edit: Delicate to Low-k Dielectrics and Silicon
9:15 AMA Versatile Design of Solid Immersion Lenses in Bulk Silicon Using Focused Ion Beam Techniques