The 35th International Symposium for Testing and Failure Analysis (November 15-19, 2009) of ASM
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Wednesday, November 18, 2009

Fail Mechanisms Causing Single Bit Flash Data Gain in Flash Memory

R. Medikonduri, Texas Instruments Incorporated, Stafford, TX

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Summary: Knowing the failure mechanisms properly, lead to prompt corrective actions in the Fab. Corrective actions in the fab, lead to lower defective units. Customers are kept happy with lower defective units and thus, the slogan “KEEP CUSTOMERS HAPPY” is justified.