T. Kane, M. P. Tenney, IBM, Hopewell Junction, NY

Summary: This paper is intended to describe the application of NCVS to localize defects in specific MOSFET devices at CA level with follow-on root cause analysis that would not have been detected using legacy methods of Focused Ion Beam (FIB) voltage contrast or scanning electron microscopy (SEM) or even atomic force probing (AFP) current imaging techniques . Localization of a FEOL defect in a discrete 45nm SOI MOSFET device in a peripheral sense amp circuit causing a paired bit line signature with follow-on transmission electron microscopy root cause analysis will be shown.