F. Infante, Centre Nationale d'Etudes Spatiales (CNES), Toulouse, France; P. Perdu, CNES-French Space Agency, 31401 Toulouse Cedex 9, France; D. Lewis, IXL laboratory, Talence, France
Summary: As the new electronics technologies shrink more and more, the need for new defect localization techniques has arisen. The Magnetic Microscopy is a promising technique which has however strong limitations when scanning currents far from the probe. We developed a new methodology, consisting to evaluate the correlation between the measurement and a set of simulations, which increase the technique resolution of a factor comprised between 10 and 20.