The 35th International Symposium for Testing and Failure Analysis (November 15-19, 2009) of ASM

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Thursday, November 19, 2009 - 10:40 AM

The Helium Ion Microscope for High Resolution Imaging, Materials Analysis, Circuit Edit and FA Applications

W. B. Thompson, J. Notte, L. Scipioni, M. Ananth, L. Stern, D. Ferranti, C. Huynh, S. Sijbrandij, L. Farkas, L. Barriss, C. Sanford, Carl Zeiss SMT, Peabody, MA

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Summary: The helium ion microscope presently has 0.3 nm resolution at a 6mm working distance. Secondary electron and backscattered ion mode images are acquired simultaneously. No sample coating is required and dielectrics can be imaged at the highest beam energy and magnification. A Rutherford Backscatter detector provides atomic level film thickness discrimination in small fields of view. A gas injection system with pattern generator gives quality, overspray free, deposition and etch capability.