J. Su, S. Liang, Y. Wen, M. Yang, L. Wu, C. Niou, Semiconductor Manufacturing International (Beijing) Corp, Beijing, China; X. Chen, Semiconductor Manufacturing International (Shanghai) Corp, Shanghai, China; G. Zhao, Semiconductor Manufacturing International (Beijing) Corp, Shanghai, China

Summary: This paper incorporates Nano probing technique with junction stain Transmission Electronic Microscopy (TEM) to reveal the subtle doping defect affecting the Static Random Access Memory function in the 65nm generation node. Device malfunction relating to lack of the Lightly Dope Drain (LDD) implant induced by inconspicuous spacer defect was determined by the combined method.The combined method is a powerful alternative to reveal the SRAM fail caused by doping issue.