T. Nakai, Micron Japan, Ltd., Nishiwaki, Japan

Summary: In this paper, an anodic wet etching-based junction profiling method is reported. This method enables us to observe site specific NMOS/PMOS junction profiles efficiently with high spatial and carrier concentration resolution. The obtained junction profiles are well matched with the simulation results. This method was actually applied to an implantation-related issue, and we succeeded in revealing the problem.