C. Shuting , Y. N. Hua, GLOBALFOUNDRIES Singapore Pte Ltd, Singapore, Singapore

Summary: A wafer shelf life acceleration test methodology is proposed. Using different RH% & temperature, we can simulate Al fluoride defects so as to understand failure mechanism & optimize wafer storage condition and eliminate F-induced corrosion on microchip Al bondpads during wafer storage. In general, it is observed that Al fluoride defects could be simulated, which are similar to those real defects found in wafer fab & assembly house. Using higher temperature & lower RH%, the “crystalline-like” Al-F defects were formed, but using lower temperature & higher RH%, the “oxide-like” Al-F defects were formed. Details of failure mechanism will be discussed chemically & physically in the paper.