D. Scott, Intel Corporation, Folsom, CA; T. R. Lundquist, DCG Systems, Inc, Freemont, CA; T. Malik, DCG Systems Inc., Fremont, CA

Summary: To enable circuit edit work for geometries required by the 22nm technology node, a new technique has been employed, pulsed spot milling (PSM). PSM eliminates the need for beam rastering which is substituted by a single-point ion beam of process-matched energy and a modulated dwell time. PSM is enabled by a new ion column design and novel chemistry-assisted processes to yield high-quality, predictable, reliable and repeatable vias <50nm diameter that are both laterally and vertically robust with minimal dependency on visual endpointing. The implementation of these new operational principles and ion control hardware on a stable and reliable gallium ion platform yields success for existing process technologies and shows a clear path to intercept 22nm technology nodes and beyond.