F. Altmann, M. Petzold, C. Schmidt, R. Salzer, Fraunhofer Institute for Mechanics of Materials, Halle, Germany; C. Cassidy, Austriamicrosystems AG, Unterpremstaetten, Austria; P. Tesch, Oregon Physics, Hillsboro , OR; N. Smith, Oregon Physics, Hillsboro, OR

Summary: In this paper we will introduce a novel methodical approach for TSV material and failure analysis, allowing to link non-destructive defect localization with efficient and accurate target preparation as well as with material and strain characterisation in the nanometer range, into a subsequent analysis workflow. The potential and advantages of the new concept and tools will be demonstrated for 3D integrated devices.